Who Episil-Precision is
Episil-Precision (3016.TW) is a specialist epitaxy foundry — it grows the crystalline layers that power and analog device makers then process, rather than running the device fab itself. Silicon epitaxy is still about 90% of sales; compound (GaN and SiC) is about 10%. A third line, germanium-on-silicon for silicon photonics, has just started.
It is not on NVIDIA's published 800 VDC list. It earns a place here because management answered a direct 800V question: GaN epitaxy is already in 800V HVDC systems, at small-volume trial.
A major shareholder is HMC (漢民科技), with which it is working on 8-inch GaN expansion. Investor conferences are being cut to twice a year.
Business mix
- Silicon epitaxy — MOSFETs, PMICs and other power devices, and the bulk of the P&L. The operational shift is off 4-inch and 5-inch lines (utilisation below 60%) and onto 8-inch, which went from 55% of silicon-epi revenue a year earlier to 70% in Q1 2026. 8-inch utilisation is near 90%.
- Compound epitaxy — 6-inch GaN turned profitable in Q1 2026 on AI, humanoid-robot and aerospace demand; 8-inch GaN is qualified and in small production. SiC is growing slowly; a Japanese IDM was added, with volume aimed at Q2 2026 for automotive and high-end industrial.
- Silicon photonics — germanium/silicon photodetector epitaxy for AI high-speed optics. Qualified at a US customer that has been in the field more than 15 years; small-volume production from February 2026. Gross margin is above the company average; the volume is still small enough that it has not been split out as its own reporting line.
Management's geographic framing is China for China, non-China for everyone else. In AI supply chains, customers asking for a non-China epi source is the stated edge against mainland competitors such as Innoscience — on GaN now, and expected on SiC later.
Where it sits in the NVIDIA 800 VDC stack
One step upstream of the device foundry. Every SiC or GaN switch in an 800 V conversion stage starts as an epi wafer.
The disclosure is unusually plain for this cohort, and equally plain about its limits:
- GaN is in 800V HVDC systems, small-volume trial — not a shipping mix number.
- Silicon MOS is in the AI supply chain; management does not know whether those parts sit on an 800V rail.
- SiC is opaque, because IDM customers will not say what the end application is.
Nine-tenths of the company is still silicon epi for MOSFETs and PMICs, which is the AI power recovery, not proof of 800V content. The Ge/Si photodetector line is an AI optics story, not a power-architecture one. Keep those three threads separate.