GCS Holdings, Inc. (股票代號: 4991)

Company Overview

• Vision Statement: 環宇芯 系天下 (GCS Core, Connecting the World)
• Slogan: "Enabling Today's Global Communications and Beyond"
• IPO Information:
  • IPO Date: 9/15/2014
  • Stock ID: 4991
  • Listed on: 證券櫃檯買賣中心 (Taipei Exchange)
• Corporate Structure:
  • GCS Holdings (@Cayman Islands) - Parent Company
    • Taiwan (100%): GCS Device Technologies
      • KGD: PD/LD Backend Ops
      • Worldwide Sales & Marketing
    • USA (100%): GCS, LLC
      • KGD: PD/LD Frontend Wafer Fab (2/3/4/6" Foundry Wafer Fab)
      • D-Tech Optoelectronics
        • KGD: APD Frontend Wafer Fab
      • D-Tech Taiwan
        • KGD: APD Backend Chip Fab
    • Xiamen (49%): Global Advanced Semiconductors (JV with Sanan IC (SAIC))
      • [6" Wafer Pure-play Wafer Foundry]
• Joint Venture (GCS – SAIC JV (GAS)):
  • GCS Holdings (Cayman Islands) owns 49% of Global Advanced Semiconductors.
  • Xiamen Sanan IC (SAIC) owns 51% of Global Advanced Semiconductors.
  • Global Advanced Semiconductors @Xiamen: Business Territory 6" wafer foundry for North America.
  • SAIC's 51% also covers ROW (Rest of World).
• Management Team:
  • Simon Yu (余有崇): Senior Vice President, General Manager, Worldwide Sales & Marketing, Component Business Group.
• Contact Information:
  • Email: syu@gcsincorp.com
  • US: (650) 892 8676
  • Taiwan: (886) (0)918 818 824
  • China: (86) 136 9989 4206

Financial Highlights

• Revenue Mix % vs Gross Margin - QoQ (1Q 2016 - 1Q 2018):
  • Gross Margin:
    • 1Q 2016: 51%
    • 2Q 2016: 40%
    • 3Q 2016: 53%
    • 4Q 2016: 36%
    • 1Q 2017: 45%
    • 2Q 2017: 54%
    • 3Q 2017: 42%
    • 4Q 2017: 45%
    • 1Q 2018: 45%
  • Revenue Mix (KGD share): (APD included)
    • 1Q 2016: 13%
    • 2Q 2016: 15%
    • 3Q 2016: 15%
    • 4Q 2016: 20%
    • 1Q 2017: 15%
    • 2Q 2017: 19%
    • 3Q 2017: 9%
    • 4Q 2017: 12%
    • 1Q 2018: 10%
• KGD Revenue Mix - QoQ (Q1 2016 - Q1 2018): (APD included)
  • DC/AOC:
    • Q1 2016: 16%
    • Q2 2016: 15%
    • Q3 2016: 24%
    • Q4 2016: 28%
    • Q1 2017: 48%
    • Q2 2017: 64%
    • Q3 2017: 47%
    • Q4 2017: 46%
    • Q1 2018: 47%
  • PON:
    • Q1 2016: 51%
    • Q2 2016: 59%
    • Q3 2016: 48%
    • Q4 2016: 42%
    • Q1 2017: 37%
    • Q2 2017: 29%
    • Q3 2017: 38%
    • Q4 2017: 36%
    • Q1 20118: 32%
  • LTE/Ethernet and Other:
    • Q1 2016: 33%
    • Q2 2016: 26%
    • Q3 2016: 21%
    • Q4 2016: 30%
    • Q1 2017: 15%
    • Q2 2017: 13%
    • Q3 2017: 17%
    • Q4 2017: 16%
    • Q1 2018: 21%

Business Segments

• Wafer Foundry:
  • RF
  • Power Electronics
  • Optoelectronics
• Brand Name Opto Chip Products (KGD: Known-Good-Die):
  • PD/MPD
  • APD
  • VCSEL
  • LD

Products & Technologies

• Core Technologies (環宇芯): InGaP HBT, PHEMT, IPD, InP HBT, GaN, HFET
• GCS has All the RF Technologies
• RF Wafer Foundry:
  • Device Technologies: RFIC, HEMT, pHEMT, HBT, InP HBT, GaN/Si, GaN/SiC
  • Frequency Range: 1GHz to 94GHz
• Power Electronics Wafer Foundry:
  • Materials: GaN/Si, SiC
• Optoelectronics Wafer Foundry:
  • Products: APD, VCSEL, FP/DFB LD, EML, 2D Image Sensors, Photonic Integrated Circuits
• KGD Products Roadmap (Development 2018):
  • Receiver: Non-hermetic BI, 25G
  • Transmitter: 25G, 10G DFB, 10G FP
  • Production:
    • 850nm PD: 1G, 400G
    • 1310/1550nm PD: 1G, 400G
    • 1310/1550nm APD: 2.5G, 10G
    • 1310/1550nm MPD: MPD Array, EC MPD, MPD
    • 850nm VCSEL: =<8G, 10G
    • 1310nm LD: 2.5G DFB, 2.5G FP
• OFC Ecosystem Products: TO-CAN/COB, Chip On Board, TOSA/ROSA/BOSA
• RF Transceiver Components (GCS has all the Preferred Device Technologies):
  • Receiver: HEMT, GaAs, InP PIN, Si PIN, SOI (T/R Switch), LNA, Filter (SAW BAW, IPD), Mixer (High fco SBD, SAW, MMIC), IF Filter, IF Amp, ADC
  • Transmitter: PHEMT, GaAs/InP HBT, GaN HEMT, CMOS, PA, Variable Attenuator, Filter (SAW BAW, IPD), Mixer (High fco SBD, SAW, MMIC), IF Filter, IF Amp, DAC
  • LO Chain (VCO, Multiplier): HBT
• 5G Needs: Super High Linearity PAs, High Frequency PAs, High Frequency Filters
• RF Technology Roadmap:
  • Wireless:
    • 2017: 0.4um & 0.25um GaN/Si HEMT, 0.5um GaN/SiC HEMT
    • Next 3 years: 0.25um/0.15um GaN HEMT (5G BTS, VSAT), BAW filter (4G, 4.5G cellphone), P3 GaAs HBT (4.5G cellphone), mmW PA InP HBT (5G cellphone), mmW mixer (5G BTS), RF PIN mmW switch (5G BTS)
  • Aerospace and Defense:
    • 2017: 0.25um GaN HEMT, THz mixer diode, 0.25um E/D-HFET, RF PIN
    • Next 3 years: 0.1um PHEMT, 0.15um GaN HEMT, GaN/Diamond
  • Power Electronics:
    • 2017: SiC Diode and JFET
    • Next 3 years: SiC MOSFET, GaN/Si MISHEMT
  • Optical Communication Network:
    • 2017: InP HBT for 100G laser driver
    • Next 3 years: Gen-3 InP HBT for 100G/400G TIA and Laser driver, 25G EPIC
• RF Technology Selection:
  • Microwave Components: 0.25-0.5um PHEMT/GaN HEMT (switch, LNA, mixer, saturated PA), GaAs HBT (VCO, doubler/prescaler, mixer, linear and saturated PA), High fco Schottky diode (THz diode) for low-loss mixer
  • Millimeter-Wave Components: 0.1-0.15um PHEMT/GaN HEMT (LNA, mixer, saturated PA), InP HBT (VCO, doubler/prescaler, mixer, linear PA), High fco Schottky diode for low-loss mixer
  • Fiber-optical IC Components (40G and above): 0.1-0.15um PHEMT or InP DHBT (laser driver), InP SHBT or DHBT (TIA, limiting amp, Mux, Demux)
  • High-speed Instruments: 0.1-0.15um PHEMT (analog components), InP HBT (digital/mixed signal components (ADC, DAC, freq. source))
  • Mixed-signal ICs: InP HBT (high data rate, high resolution A-D and D-A Converters)
• GCS Processes for 5G:
  • Below 6 GHz: 0.25um - 0.4um GaN HEMT for BTS PA, P3 InGaP HBT for handset PA, HBT-PIN switch for single-chip PA-Phase Shifter (if phased array is needed), BAW for >2GHz RF filters
  • mmW (28 – 40 GHz): 0.15um GaN HEMT for BTS wide band PA, InP HBT for handset PA, InP HBT-PIN switch for single-chip PA-Phase Shifter, 0.25um InP HEMT-PIN for single-chip LNA-Phase Shifter, InP BiHEMT for single-chip PA/LNA/Switch/Phase Shifter
• InP Technologies (for 5G mmWave FEM):
  • PA, LNA, RF switch, mixer, phase shifter and various passives integrated into RF FEM for superior performance.
  • InP BIFET is a compelling technology choice.
  • Antennas packaged directly on top of FEM for further improvement in performance and cost.
  • Why InP Technologies?: InP HBT allows single power supply for PA and LNA, Superior PA efficiency at mmWave frequencies, Integrate InP HEMT LNA/Switch for small size, InP HBT and HEMT for high Ft without E-beam writer, Performance always wins at RF Front-end.
• Filter Technologies:
  • Advantages of BAW: Higher Frequency, Lower loss, Higher power handling, Better temperature stability, Steeper filter sidewall, Smaller size, MEMS or GaAs fab compatible/scalable.
  • SAW (Surface Acoustic Wave): Acoustic wave propagates in a lateral direction, Covers frequencies up to about 1.9GHz.
  • BAW (Bulk Acoustic Wave): Acoustic wave propagates in a vertical direction, Suited for frequencies from 1.5GHz to 9GHz.
  • Two Types of BAW Structure: Solidly Mounted Resonator (BAW-SMR: TriQuint et al.), Film Bulk Acoustic Resonator (FBAR: Avago et al.).
  • GCS uses a modified FBAR approach for: Lower loss, Easier process, Patentable process.
• GCS IS READY FOR 5G AND 400G:
  • 5G: Super High Linearity HBT Processes, High Frequency PHEMT Processes, High Frequency Filters Process.
  • 400G: 100G/200G in production, Super Fast Photodiodes, VCSEL coming soon.
• Other Future Growth Engines (Other Technologies For High Volume Products):
  • High PCE VCSEL for 3D Sensing (on 6″ wafer) (proven for production).
  • Advanced APD array for LiDAR.
  • Advanced Micro-LED process.
  • VCSEL with integrated micro-lens for ADAS and LiDAR.
  • GaAs high power laser for commercial cooking.

Clients & Markets

• Applications & Markets (Brand Name Chip Products):
  • Data Centers: 40G, 100G, 200G, 400G
  • Consumer & IoT: AOC, HDMI, Mobile, Wearable
  • LTE BASE STATION: 4G, 4.5G, 5G
  • PON (FTTx): 2.5G, 10G, 25G
• OFC Ecosystem: Small base station, Large capacity base station, OE Conversion Module, Internet, Transceiver, OLT, ONU, Optical Network Termination, Optical Network Unit.
• GCS Inside Mega Data Center: 40G, 100G, 200G, 400G
• GCS Inside Large and Small Base Station: "環宇芯 inside/HP PA 6G/10G/25Gbps" and "環宇芯 inside/HF PA 6G/10G/25Gbps" for 5G base stations.
• GCS Inside Your Building, Your Home: 2.5Gbps/10Gbps/25Gbps APD for Gigabit Passive Optical Network (OLT, ONU).
• RF Foundry Applications:
  • Wireless (Mobile & Infrastructure): Base Station (4/4.5/5G), Smart Phones (6" partner), Wifi (802.11AC, 802.11AX)
• Major RF Markets for Compound Semiconductors (Market Drivers):
  • 4G Cellphone and 802.11ac WLAN
  • 5G Wireless Network (2018: 4.5G, f <6GHz; 2020: 28GHz phased-array single-chip PA/LNA/Phase Shifter)
  • Aerospace and Defense Microelectronics
  • Wide-bandgap semiconductor power electronics
  • 100Gbps / 400Gbps Ethernet, Mega Datacenter, Automotive, IoT
• Power Electronics Foundry Applications: Wind power, Electric vehicles, Solar power, Industrial equipment, Data centers, High-speed rail, Power supplies, Smart home/IoT.
• Optoelectronics Foundry Applications:
  • Optical Fiber Networks: VCSEL/DFB EML/PIC
  • Industrial: VCSEL/APD LD
  • Medical: VCSEL Imager
  • Consumer: VCSEL (3D Sensing) LD
• Major RF Market Opportunities (2020 Market Size & Semiconductor Technologies):
  • Cellphone/Tablet (4G, 4.5G, 5G):
    • Power Amplifier: $4.2B (GaAs HBT, E/D HEMT, InP HBT-PIN)
    • RF Filter: $5B (BAW)
  • Cellphone Base Station:
    • Power Amplifier: $1.5B (GaAs HBT, GaN HEMT, RF PIN)
  • Aerospace & Defense:
    • T/R Module: $0.8B (GaAs HEMT, GaN HEMT, HBT, RF PIN)
  • Power Electronics:
    • HV Diode and Switch: $5B (SiC, GaN/Si HEMT)
  • Optical Communication:
    • PD, Laser, TIA, Driver Amp: $1.2B (GaAs HEMT, InP HBT, Optoelectronics)
  • Automotive, Consumer:
    • Auto Radar, T/R Module: $0.5B (GaAs HEMT, GaN HEMT, VCSEL)
• 5G Applications: Cloud Computing, Autonomous Vehicle, Advanced AI assistant, Medical Robot, Robotic Service, Wireless VR, 5G mmWave, AR, 4K ULTRANG, 360° Video Telepresence, 4K vic5G sub-6GHz Gaming, Connected Wearable, Drone Delivery, Real time Translation, Smart City, Industrial Automation, Asset Tracking, Port Management, Connected Home, Remote Surveillance, Shared Utilities.
• 5G Ecosystem Key Players:
  • Telecom and ISP Provider: COMCAST, CISCO, COX, orange, verizon, docomo, SK telecom, Sprint, CHINA MOBILE, ZTE, NEC, ERICSSON, HUAWEI, SAMSUNG, NOKIA
  • Internet giants: YOUKU, ESPA, NETFLIX, hulu, ebay, HBO, amazon, TED, Tencent, SAP, Google Cloud Platform, Adobe, IBM Bluemix, Microsoft HoloLens, salesforce
  • Finance Technology: VISA, cíti, MasterCard, PayPal, UnionPay, HSBC
  • Autonomous Vehicle: BOSCH, DELPHI, G, intel, TOYOTA, TESLA
  • Industrial application: UMS, INTUITIVE SURGICAL, KODIAK, VERB SURGICAL, SIEMENS, ABB, Schneider, OMRON, EMERSON, Rockwell Automation, MITSUBISHI, CARBON ROBOTICS, AETHON, YOKOGAWA, DANAHER
  • Smart Home/building: VINCI, ASEB, BOUYGUES, Rockwell Automation, SIEMENS, ABB, DELTA DORE, EMERSON, Honeywell, YASKAWA, FANUC, muRata
  • Equipment and Material: KYOCERA, APPLIED MATERIALS, SUMITOMO CHEMICAL, Dow, Wolfspeed, ASML, TANAKA, Panasonic, Lam, AQU POND, RESEARCH MATERION, KLATencor, AVI SPL, CRESTRON, BARCO, INDIUM CORPORATION
  • Foundry and Manufacturing: GCS, TOWERJAZZ, tsme, ums, win, SMIC, PALOMAR, SAMSUNG, P, PayPal, orbotech, SPIL, Amkor, AWSC, Besi Technology, AMETEK, G, EVG, FemoTec, NVIDIA
  • Chip manufacturer: SAMSUNG, QUALCOMM, MEDIATEK, Qorvo, AMPLEON, intel, Wolfspeed, Infineon, NXP, ANALOG DEVICES, SUMITOMO ELECTRIC, FUJITSU, muRata, BROADCOM, TOSHIBA, AMD, IMPINJ, SKYWORKS
• RF Component and Module Supply Chain (Key Players):
  • RF component stage: SONY, Peregrine, Qorvo, Infineon, Broadcom, Avago, Skyworks, Wisol, Taiyo Yuden, Cavendish Kinetics
  • FEM stage: Qorvo, Infineon, Broadcom, Avago, Skyworks, TDK, EPCOS
  • OSAT services: Amkor, ASE GROUP, GJCET, STATSChipPAC
  • Handset device stage (Discrete components / Integrated modules): ZTE中兴, Xiaomi (小米), Lenovo, LG, Huawei, Samsung
  • Platform providers: Qualcomm, Intel
  • GCS is highlighted in: PA/LNA, RF switch, Antenna device (tuner & switch) components.
• LTE-V2X: In-car communication for autonomous driving and traffic management.

Outlook & Strategy

• Future Growth Roadmap:
  • RF Wafer Foundry -> 4G -> 5G
  • 6" FAB: 5G PA, 5G Filter, 3D VCSEL
  • Target: Up to 30,000 wafers/month
• GCS IS READY FOR 5G AND 400G:
  • 5G: Super High Linearity HBT Processes, High Frequency PHEMT Processes, High Frequency Filters Process, leading to 6" FAB (soon).
  • 400G: 100G/200G in production, Super Fast Photodiodes, VCSEL coming soon.
• Other Future Growth Engines (Other Technologies For High Volume Products):
  • High PCE VCSEL for 3D Sensing (on 6″ wafer) (proven for production).
  • Advanced APD array for LiDAR.
  • Advanced Micro-LED process.
  • VCSEL with integrated micro-lens for ADAS and LiDAR.
  • GaAs high power laser for commercial cooking.
• Growth Cycle:
  • Data Center: 10G/40G » 100G » 200G/400G (Brand name optical chips)
  • Long Haul: 100G » 200G » 400G (Brand name optical chips)
  • Metro: 10G/40G » 100G » 200G (Brand name optical chips)
  • Access: 2.5G » 10G » 25G (Brand name optical chips)
  • 5G: 3G » 4G » 5G (High volume 6" FAB, Super High Linearity HBT, High Frequency HBT and PHEMT, High Frequency Filters)
• 5G is coming!: 萬物互聯 (Internet of Everything), 無縫連接 (Seamless Connectivity), 無所不能 (Omnipotent).
• 5G: Everything is possible under the Sun: 太陽底下沒有什麼不可能! (Nothing is impossible under the sun!).
• 5G Enables Huge Business Potential: Total market size of 158.9 USD bn by 2026.
  • 零售 (Retail): 21%
  • 農業 (Agriculture): 9.6%
  • 能源 & 工業 (Energy & Industry): 30%, 19%
  • 製造 (Manufacturing): 28%, 18%
  • 公共安全 (Public Safety): 20%, 13%
  • 醫療 (Healthcare): 19%, 12%
  • 公共交通 (Public Transport): 16%, 10%
  • 媒體娛樂 (Media & Entertainment): 14.9%
  • 汽車 (Automotive): 13.8%
  • 金融服務 (Financial Services): 9.6%

Additional Data

• Ethernet Transceivers Shipment by Data Rate (Historical Data and Forecast 2010-2021):
  • Highlights: 25Gx4 VCSEL, 100G GaAs PD, 100/200/400G InGaAs PD.
  • Data rates tracked: 1 GbE, 10 GbE, 25GbE, 40 GbE, 50 GbE, 100 GbE, 200 GbE, 400GbE.
  • Source: LightCounting's 2016 report.
• Shipments of optical transceivers used in wireless infrastructure (Historical Data and Forecast 2010-2021):
  • Highlights: 25G/28G PDs, 25G starts taking off.
  • Data rates tracked: 1 Gbps, 3 Gbps, 6 Gbps, 10 Gbps, 12-16 Gbps, 25 Gbps.
  • Source: LightCounting's 2016 report.
• FTTx Transceiver Unit Shipments by Type (Historical Data and Forecast 2010-2021):
  • Types: BPON, GPON, EPON, NG PON, Point-to-point.
  • Highlights: Sole supplier To Huawei STIA BOSA (2.5G APD, 2.5G STIA PD), XG-PON starts to take off (10G APD, 25G APD).
  • Source: LightCounting's 2016 report.
• RF Content in LTE Phone (2013-2015):
  • Premium Filters SAM: Growing from ~$800M (2013) to ~$1700M (2015) with 45% + CAGR.
  • Total RF Content:
    • Typical 3G: $3.75
    • Regional LTE: $7.00
    • Global Roaming LTE: $10.50 +
  • Component Breakdown (Global Roaming LTE): SAW Filters ($3.00), BAW Filters ($3.50), Power Amplifiers ($2.00), Switches / ASMs ($1.00), Wi-Fi ($1.00).
  • Sources: Mobile Experts and TriQuint.
• Global Filter Market (2015-2020E):
  • Market size growing from ~$50 billion (2015) to ~$130 billion (2020E).
  • Trend: from ~50 filters (15 Bands) to ~100 filters (More bands 4x4 MIMO).
  • Source: Qualcomm.
• RF Filters Market (2014-2020):
  • Total market grows from ~$7B (2014) to ~$19B (2020).
  • Market breakdown by component: Power Amplifier, Filter, Switches, Tuning, Antenna, MIPI/CMOS Controllers.
  • Source: Mobile Expert 2016.
• RF BAW Filters Market (Wafers) (2017-2023):
  • Total # of Wafers (M) growing from ~1.2M (2017) to ~5.8M (2023).
  • Source: Simon says (Simon Yu, Jan 2018).
• 5G FEM Forecast (2018-2027): "BIG MARKET!"
  • FEM & RF Transceiver Market Size for LTE-A Pro + 5G <6GHz: Growing from ~2 billion units (2018) to ~9.5 billion units (2027).
  • FEMs + Transceivers Market in BILLION UNITS, >6GHz: Growing from negligible (2018) to ~2.2 billion units (2027).
  • Source: Duet Microelectronics.
• 3D Sensing VCSEL Market Size (in smartphones) (mn units) (2017-2020):
  • Android: 40 (2017), 200 (2018), 216 (2019), 600 (2020).
  • Apple (front, facial recognition): 0 (2017), 42 (2018), 265 (2019), 273 (2020).
  • Apple (back, time-of-flight for AR): 0 (2017), 0 (2018), 50 (2019), 210 (2020).
  • Source: J.P. Morgan.
• 3D Sensing VCSEL Market Size (in smartphones) (6" Wafers) (2019-2023):
  • Growing from ~70,000 wafers (2019) to ~170,000 wafers (2023).
  • Source: Simon says (Simon Yu, Jan 2018).
• Mobile Traffic → 5G (Exhibit 20: Mobile traffic is expected to grow at a 53% CAGR from 2015-2020):
  • Drivers: 4K/8K 超高清 (Ultra HD), VR/AR, Smart Everything, IoT, 自動駕車 (Autonomous Driving), 無人機 (Drones).
  • Global Mobile Traffic (Exabytes per month) by device type: Smartphone, M2M, Tablets, PCs, Non smartphone, Other Portable Devices. Shows significant growth across all categories from 2015 to 2020.
  • Source: Cisco VNI, 2016.
• Mobile Wireless Technology Evolution (图1:移动通信系统演进历程):
  • 1G (1981): 語音 (Voice), 模擬 (Analog).
  • 2G (1992) - 100Kbps: 語音 (Voice), 數字 (Digital).
  • 3G/HSPA (2001) - 100Mbps: 數據業務 (Data Services), 互聯網應用 (Internet Applications).
  • 4G/LTE (2011) - 1Gbps: 數據業務占絕對主導 (Data services dominate), 各類豐富的Apps (Various rich Apps), 高速移動 (High-speed mobile).
  • 5G及未來 (2020) - 10G+bps: 10-100x 現有用戶吞吐率 (10-100x existing user throughput), 移動互聯網 (Mobile Internet), 海量連接 (Massive Connectivity), 物聯網 (IoT).
  • Source: 公开资料,东兴证券研究所 (Public information, Dongxing Securities Research Institute).
• What is 5G? 萬物互聯! (Eight Major Indicators):
  • 超寬 (Extreme Mobile Broadband): 20 Gbps (>10 Gbps peak data rates, 4G:1 Gbps).
  • 海量 (Massive machine communication): 10-100 x more devices (4G:100K nodes/Km2), 10 years on battery, M2M ultra low cost.
  • 極速 (Critical machine communication): 100 Mbps whenever needed (4G:10 Mbps), 10 000 x more traffic, <1 ms radio latency (4G:10 ms), Ultra reliability (1 out of 100m packets lost).
  • 三大應用場景 (Three Major Application Scenarios).
  • Source: Nokia.
• How Fast is 5G?:
  • Peak data speeds for different generations of cellular technologies: 3G (HSDPA) 14Mbps, 4G (LTE cat 4) 150Mbps, 5G 10Gbps.
  • Time required for download of a 8GB video: 3G 70 min, 4G 7 min, 5G 6 sec.
  • Source: Huawei, Goldman Sachs Global Investment Research.
• Spectrum for 5G - Available Spectrum by Geographical Area:
  • Coverage, Capacity, High Throughput across Europe, China, Japan, Korea, USA.
  • Frequencies shown: 600MHz, 2.6GHz, 3.1, 3.3, 3.4, 3.55, 3.6, 3.7, 3.8, 4.2, 4.4, 4.5, 4.8, 4.9, 5, 24.25, 26.5, 27.5, 28.28, 28.35, 37, 39, 40, 43.5, 64, 71.
  • Source: GSMA, Courtesy: Yole.
• 5G Example (First Public Live 5G Trial in Europe):
  • On Sept 29, 2017, participants at the EU Digital Summit in Estonia remotely controlled an industrial excavator over an ultrafast live 5G network.
  • Made possible by Ericsson, Intel and Telia.
  • Demonstrated 26.3 GBIT/S PEAK DOWNLINK THROUGHPUT.
  • Source: Intel Corporation.
• 5G Example (触觉互联网应用 - Tactile Internet Applications):
  • Diagram showing a tactile internet system for remotely controlled robots.
  • Source: IEEE 5G Summit Lisbon, Protocols and Standardization Activities for 5G, IEEE. Penklis Chaizinisios ESSN Research Lab, Alexander TEI of Thessaloniki, 2017.1.