VPEC 法說會簡報

Company Overview

公司簡介

• 核心競爭力: MOCVD創造世界級之競爭力 (MOCVD creates world-class competitiveness)

Financial Highlights

2022年-2025年前三季損益情形 (P&L Situation 2022 - Q1-Q3 2025)

Products & Technologies

核心技術 (Core Technology)

MOCVD (有機金屬氣相沉積法 / Metal Organic Chemical Vapor Deposition)

• 生產機台 (Production Equipment): MOCVD有機金屬化學氣相沉積法 (Metal Organic Chemical Vapor Deposition)
• 生產方式 (Production Method): 透過有機金屬化學氣相沉積法，在基板上生長半導體薄膜的方式，同時透過機台即時監控，精確控制磊晶層，完成砷化鎵、磷化銦、氮化鎵等不同產品磊晶片生產。
• 生產原理 (Production Principle): 磊晶層是由MOCVD在腔體中加熱基板，一個原子層，層層堆疊，行成磊晶層。

磊晶過程中之化學反應 (Chemical Reactions during Epitaxy)

• 化學反應式 (Chemical Reaction Examples):
  • $\text{Ga}(\text{CH}_3)_3 + \text{AsH}_3 ==> \text{GaAs} + \text{CH}_4$
  • $\text{In}(\text{CH}_3)_3 + \text{PH}_3 ==> \text{InP} + \text{CH}_4$
• 主要原物料 (Main Raw Materials): MO Source + Hydride + Carrier Gas: $\text{H}_2$
• MO Source List:
  • TEAl: Tri-ethyl-Aluminum ($\text{C}_2\text{H}_5)_3\text{Al}$
  • TMGa: Tri-Methyl-Gallium ($\text{CH}_3)_3\text{Ga}$
  • TMIn: Tri-Methyl-Indium ($\text{CH}_3)_3\text{In}$
  • DETe: Di-ethyl-Tellurium ($\text{C}_2\text{H}_5)_2\text{Te}$
  • DEZn: Di-ethyl-Zinc ($\text{C}_2\text{H}_5)_2\text{Zn}$
  • $\text{CP}_2\text{Mg}$: Bis (cyclo-penta-dienyl) Magnesium (環戊二烯鎂)
• Hydride List:
  • $\text{AsH}_3$: Arsine
  • $\text{PH}_3$: Phosphine
  • $\text{SiH}_4$: Silane
  • $\text{Si}_2\text{H}_6$: Disiline
  • $\text{H}_2\text{Se}$: Hydrogen Selenide
  • $\text{CBr}_4$: Carbon Tetrabromide

半導體分類 (依使用材料) (Semiconductor Classification (by material used))

• Element: Si, Ge
• IV-IV: SiC, SiGe
• III-V: GaAs, InP, GaN, GaP, GaSb...
• II-VI: ZnSe, ZnS, CdS, etc.
• 化合物類型 (Compound Types):
  • 二元化合物 Binary: GaAs, InP, GaP, GaN, etc.
  • 三元化合物 Ternary: InGaAs, InGaP, AlGaAs, etc.
  • 四元化合物 Quaternary: AlGaInP, InGaAsP, etc.
  • 五元化合物 Pentanary: AlGaInAsN, etc.

化合物半導體材料特性 (Compound Semiconductor Material Characteristics)

1. High Electron Mobility 高電子移動速率 (5.7x higher than CMOS)
2. High Frequency Response 高頻率響應
3. Wide Band Width 寬幅之頻寬
4. High Linearity 高線性度
5. High Power 高功率
6. Alternative Choice of Material 材料選擇多元性
7. 抗輻射

產品應用 (Applications)

• 微電子產品 (Microelectronic Products): HBT, pHEMT, BiHEMT, GaN on XX
• 光電子產品 (Optoelectronic Products): PIN (PD, APD), VCSEL, LD, SC, CW-Laser, GaN on XX

Clients & Markets

微電子產品 產業供應鏈 (Microelectronic Product Industry Supply Chain)

• Substrate (基板): 2~6" GaAs Substrate
  • Suppliers: Sumitomo, Freiberger, AXT
• Epitaxy (磊晶): GaAs Epi- Wafer (磊晶片)
  • Equipment: MOCVD Reactor
  • Role: VPEC is a Pure Epi Provider
• IC Process (IC製程): Microelectronics IC Process
  • IDM: Qorvo, Skyworks
  • Fabless: Avago, Qualcomm, Richwave
• Foundry: WIN, AWSC
• End Application: Wireless Communication
• Package & Testing: IC Package & Testing

Outlook & Strategy

2025 Outlook: 微電子 (Microelectronics)

• 01: 5G Mobile Penetration
• 02: WiFi 7
• 03: V2X
• 04: IoT Smart Link (4G PA)

2025 Outlook: 光電子 (Optoelectronics)

• 01: Data Center High Speed Connectivity
  • Products: PD for 800G, VCSEL for 400G & 800G
• 02: 3D-sening
  • Products: VCSEL / PD
• 03: AR/VR
  • Products: VCSEL
• 04: Future Driving Engines
  • Products: 車用光達 (LD/PD)
• 相關應用/技術: 機器視覺 (Machine Vision), 低軌道衛星 (Low Earth Orbit Satellite), 無人機 (Drone), AI glass, 矽光子 (Silicon Photonics), P-sensor, 3D Sensing, ToF.

AI終端覺醒: 感知 × 運算 × 機動 (AI Terminal Awakening: Sensing × Computing × Mobility)

Additional Data

• Proprietary and Confidential Statement: VPEC Proprietary and Confidential (Appears on Slides 9 and 11)
• Source Note (Slide 11): Source: Copilot